H0009.02NLT: Top Choice in United States (USA) Utsource Holding Company Limited

Description

Parameter	Description
Part Number	H0009.02NLT
Type	N-Channel MOSFET
VDS (Drain-Source Voltage)	±60V
RDS(on) (On-Resistance)	4.5 mΩ @ VGS = 10V, ID = 30A
ID (Continuous Drain Current)	30A @ TC = 25°C
PD (Total Power Dissipation)	170W @ TC = 25°C
VGS (Gate-Source Voltage)	±20V
fT (Transistor Forward Transistion Frequency)	2.8 MHz
Qg (Total Gate Charge)	65 nC
Package Type	TO-220
Operating Temperature Range	-55°C to +150°C

Handling Precautions:
- Handle with care to avoid damage from electrostatic discharge (ESD). Use appropriate ESD protection measures.
Mounting and Assembly:
- Ensure proper heat sinking when operating at high currents or power levels to maintain junction temperature within specified limits.
- Follow manufacturer guidelines for soldering profiles to prevent thermal shock.
Biasing and Drive Requirements:
- Apply gate voltages within the specified range to ensure reliable operation and prevent damage.
- Use a low-inductance gate drive circuit to minimize switching losses and electromagnetic interference (EMI).
Application Considerations:
- Suitable for use in switching power supplies, motor control circuits, and other high-efficiency power conversion applications.
- Verify that the maximum ratings are not exceeded under all operating conditions.

(For reference only)