BC807-40W,115: Top Choice in United States (USA) Utsource Holding Company Limited

Description

Parameter	Value	Unit
Type	BC807-40W,115	-
Collector-Emitter Voltage (VCEO)	60	V
Collector-Base Voltage (VCBO)	65	V
Emitter-Base Voltage (VEBO)	5	V
Continuous Collector Current (IC)	800	mA
Power Dissipation (PD)	400	mW
Transition Frequency (fT)	300	MHz
Storage Temperature Range (TSTG)	-65 to 150	°C
Operating Temperature Range (TA)	-65 to 150	°C

Handling Precautions: The BC807-40W,115 is sensitive to electrostatic discharge (ESD). Handle with appropriate ESD protection measures.
Mounting: Ensure proper mounting and alignment to avoid mechanical stress on the leads.
Soldering: Use a soldering temperature not exceeding 260°C for no more than 10 seconds per operation to prevent damage.
Heat Sinking: For applications where the transistor may dissipate significant power, ensure adequate heat sinking to maintain operating temperatures within specified limits.
Biasing: Proper biasing of the base-emitter junction is crucial to achieve optimal performance and stability.
Testing: Test the device under controlled conditions before incorporating it into final designs to ensure compliance with specifications.

(For reference only)