IPW60R099C6 TO-247: Top Choice in United States (USA) Utsource Holding Company Limited

Description

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Continuous Drain Current	ID	TC = 25°C	-	60	-	A
Pulse Drain Current	IGM	t = 10 ms, Repetition Rate = 1%	-	300	-	A
Gate-Source Voltage	VGS	-	-20	0	20	V
Drain-Source Breakdown Voltage	BVdss	ID = 250 μA	650	-	-	V
RDS(on) at TJ=25°C	RDS(on)	VGS = 10V, ID = 40A	-	9.9	-	mΩ
RDS(on) at TJ=125°C	RDS(on)	VGS = 10V, ID = 40A	-	15	-	mΩ
Total Switching Energy Loss	ETSW	VDS = 450V, ID = 40A, fSW = 100kHz	-	18.7	-	mJ

Handling Precautions:
- Handle the IPW60R099C6 with care to avoid damage to the leads and body.
- Ensure proper anti-static precautions are taken as MOSFETs are sensitive to electrostatic discharge (ESD).
Mounting:
- Mount the device on a heat sink if operating at high currents or in high ambient temperatures.
- Use thermal grease between the device and the heat sink for efficient heat dissipation.
Operating Conditions:
- Ensure that the operating voltage does not exceed the rated drain-source breakdown voltage (BVdss).
- Keep the junction temperature within specified limits by adequate cooling measures.
Pulse Operation:
- For pulse applications, ensure the pulse width and repetition rate do not exceed the rated pulse current (IGM).
Storage:
- Store in a dry, cool place away from direct sunlight and corrosive substances.
- Follow recommended storage conditions to prevent degradation of performance.
Testing:
- Use appropriate test equipment calibrated to industry standards for accurate parameter measurement.
- Refer to the datasheet for detailed test conditions and methods.

(For reference only)