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Parameter | Description | Value |
---|---|---|
Part Number | Unique identifier for the component | D808K013DPTP4 |
Manufacturer | Company that produces the component | Vishay |
Series | Family or series of components | SiC Schottky Diodes |
Type | General category of the component | Diode |
Technology | Manufacturing technology used | Silicon Carbide (SiC) |
Polarity | Direction of current flow | Unidirectional |
Maximum Repetitive Peak Reverse Voltage (VRRM) | Maximum reverse voltage the diode can withstand | 650 V |
Maximum Average Rectified Forward Current (IF(AV)) | Continuous forward current at specified conditions | 8 A |
Peak Repetitive Forward Surge Current (IFSM) | Maximum allowable surge current | 240 A |
Junction Operating Temperature (TJ) | Range of temperatures for proper operation | -55°C to +175°C |
Storage Temperature (TSTG) | Temperature range for storage | -55°C to +175°C |
Package Type | Encapsulation type | TO-220 |
Lead Finish | Surface finish of the leads | Matte Tin |
Body Material | Material composition of the body | Ceramic and Plastic |