Description
BUY FQD11P06TM https://www.utsource.net/itm/p/12610357.html
| Parameter |
Symbol |
Min |
Typ |
Max |
Unit |
Description |
| Drain-Source On-State Resistance |
RDS(on) |
- |
1.6 |
- |
Ω |
At VGS = 10V, ID = 4A |
| Gate-Source Voltage |
VGS(th) |
1.0 |
2.0 |
3.0 |
V |
Gate-source threshold voltage |
| Continuous Drain Current |
ID |
- |
- |
11 |
A |
At Tc = 25°C |
| Pulse Drain Current |
IDM |
- |
- |
35 |
A |
Pulse duration ≤ 10ms, duty cycle ≤ 1% |
| Power Dissipation |
PD |
- |
- |
48 |
W |
At TC = 25°C |
| Junction Temperature |
TJ |
-25 |
- |
175 |
°C |
Operating junction temperature range |
| Storage Temperature |
TSTG |
-55 |
- |
150 |
°C |
Storage temperature range |
Instructions for FQD11P06TM:
Handling Precautions:
- Avoid exposing the device to excessive temperatures beyond the specified operating and storage ranges.
- Use appropriate ESD (Electrostatic Discharge) protection when handling the component.
Mounting and Soldering:
- Ensure that the mounting surface is clean and free from contaminants.
- Follow recommended soldering profiles to prevent thermal damage. Refer to the manufacturer’s guidelines for specific soldering conditions.
Operation:
- Operate within the specified electrical parameters to ensure reliable performance.
- Ensure proper heat sinking if operating near maximum current or power dissipation limits.
Testing:
- During testing, apply gate voltages carefully to avoid exceeding the VGS(th) limits.
- Verify that all connections are secure and correctly made to avoid short circuits or incorrect operation.
Storage:
- Store in a dry environment within the specified storage temperature range.
- Protect from physical damage during storage and transportation.
For detailed specifications and more information, refer to the official datasheet provided by the manufacturer.
(For reference only)
More detail about Utsource Holding Company Limited
