Description
BUY UH860G https://www.utsource.net/itm/p/12610415.html
| Parameter |
Description |
Value |
| Part Number |
Product identifier |
UH860G |
| Type |
Device type |
MOSFET |
| Package |
Encapsulation type |
TO-220 |
| VDS (Max) |
Drain-to-source voltage |
80V |
| ID (Max) |
Continuous drain current |
57A |
| PD (Max) |
Total power dissipation |
140W |
| RDS(on) (Max) |
On-state resistance at specified conditions |
3.5mΩ |
| Qg (Total) |
Total gate charge |
119nC |
| VGS(th) (Min/Max) |
Gate threshold voltage |
2.0/4.0V |
| TJ (Max) |
Maximum junction temperature |
175°C |
| SOA (Single Pulse) |
Safe operating area for single pulse |
Refer to datasheet graph |
| Storage Temperature |
Temperature range for storage |
-55°C to 150°C |
Instructions for Use:
- Handling Precautions: The UH860G is sensitive to electrostatic discharge (ESD). Handle with appropriate ESD protection measures.
- Mounting: Ensure proper heat sinking when mounting the device, especially in high-power applications to maintain operational temperatures within limits.
- Biasing: Apply gate voltages carefully to avoid exceeding VGS ratings which can cause immediate damage.
- Safe Operating Area (SOA): Review the SOA graph in the datasheet to ensure that the device operates within safe limits under all conditions.
- Storage and Environment: Store in a dry environment and avoid exposure to extreme temperatures outside the specified storage range.
- Testing: Perform initial testing at low power levels to verify correct operation before deploying in final applications.
- Refer to Datasheet: For detailed specifications and application notes, always refer to the latest version of the product datasheet provided by the manufacturer.
(For reference only)
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