2SK388

2SK388

Category: Available (Qty:9999999)
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Description

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Parameter Symbol Value Unit
Drain-source voltage Vds 30 V
Gate-source voltage Vgs ±20 V
Continuous drain current Id 1.0 A
Pulsed drain current Ipd 5.0 A
Input capacitance Ciss 480 pF
Output capacitance Coiss 60 pF
Reverse transfer capacitance Crss 20 pF
Total gate charge Qg 75 nC
Threshold voltage Vth 2 to 4 V
On-resistance Rds(on) 1.5 Ω

Instructions for Use:

  1. Biasing Conditions:

    • Ensure the gate-source voltage (Vgs) does not exceed ±20V to prevent damage to the device.
    • Operate within the specified drain-source voltage (Vds) of up to 30V.
  2. Current Handling:

    • The continuous drain current (Id) should not exceed 1.0A to avoid overheating or damaging the component.
    • For pulsed applications, the pulsed drain current (Ipd) can go up to 5.0A but ensure that the pulse width and frequency do not lead to excessive heating.
  3. Capacitance Considerations:

    • Account for input capacitance (Ciss) of 480pF when designing circuits, especially in high-frequency applications.
    • The output capacitance (Coiss) is 60pF and reverse transfer capacitance (Crss) is 20pF, which are critical for switching speed and performance.
  4. Gate Drive Requirements:

    • The total gate charge (Qg) is 75nC, which influences the drive circuit design and switching speed.
    • Ensure the threshold voltage (Vth) range of 2 to 4V is considered when setting up the gate drive signal.
  5. Thermal Management:

    • Monitor the on-resistance (Rds(on)) of 1.5Ω as it contributes to power dissipation. Proper heat sinking may be required depending on the application.
  6. Storage and Handling:

    • Store in a dry environment and handle with care to prevent electrostatic discharge (ESD) damage.
(For reference only)

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