Description
BUY 2SK388 https://www.utsource.net/itm/p/12610515.html
Parameter |
Symbol |
Value |
Unit |
Drain-source voltage |
Vds |
30 |
V |
Gate-source voltage |
Vgs |
±20 |
V |
Continuous drain current |
Id |
1.0 |
A |
Pulsed drain current |
Ipd |
5.0 |
A |
Input capacitance |
Ciss |
480 |
pF |
Output capacitance |
Coiss |
60 |
pF |
Reverse transfer capacitance |
Crss |
20 |
pF |
Total gate charge |
Qg |
75 |
nC |
Threshold voltage |
Vth |
2 to 4 |
V |
On-resistance |
Rds(on) |
1.5 |
Ω |
Instructions for Use:
Biasing Conditions:
- Ensure the gate-source voltage (Vgs) does not exceed ±20V to prevent damage to the device.
- Operate within the specified drain-source voltage (Vds) of up to 30V.
Current Handling:
- The continuous drain current (Id) should not exceed 1.0A to avoid overheating or damaging the component.
- For pulsed applications, the pulsed drain current (Ipd) can go up to 5.0A but ensure that the pulse width and frequency do not lead to excessive heating.
Capacitance Considerations:
- Account for input capacitance (Ciss) of 480pF when designing circuits, especially in high-frequency applications.
- The output capacitance (Coiss) is 60pF and reverse transfer capacitance (Crss) is 20pF, which are critical for switching speed and performance.
Gate Drive Requirements:
- The total gate charge (Qg) is 75nC, which influences the drive circuit design and switching speed.
- Ensure the threshold voltage (Vth) range of 2 to 4V is considered when setting up the gate drive signal.
Thermal Management:
- Monitor the on-resistance (Rds(on)) of 1.5Ω as it contributes to power dissipation. Proper heat sinking may be required depending on the application.
Storage and Handling:
- Store in a dry environment and handle with care to prevent electrostatic discharge (ESD) damage.
(For reference only)
More detail about Utsource Holding Company Limited