Description
BUY 3DD13012AN https://www.utsource.net/itm/p/12610632.html
| Parameter |
Value |
Unit |
| Collector-Emitter Voltage (Vce) |
1200 |
V |
| Collector Current (Ic) |
1300 |
mA |
| Power Dissipation (Ptot) |
65 |
W |
| Junction Temperature (Tj) |
-55 to +150 |
°C |
| Storage Temperature (Tstg) |
-55 to +150 |
°C |
| Transition Frequency (ft) |
2.5 |
MHz |
| Base-Emitter Saturation Voltage (Vbe(sat)) |
2.0 typical |
V |
| Collector-Emitter Saturation Voltage (Vce(sat)) |
2.0 typical |
V |
Instructions for Use:
Installation:
- Ensure the device is handled with care to avoid damage to leads and the body.
- Mount the transistor on a suitable heatsink if operating at high power levels.
Operating Conditions:
- Do not exceed the maximum ratings specified in the table.
- Operate within the recommended junction temperature range to ensure reliability.
Storage:
- Store in a dry, cool place away from direct sunlight.
- Keep in original packaging until ready to use to prevent static damage.
Handling Precautions:
- Use appropriate anti-static precautions when handling.
- Avoid mechanical stress on the leads during soldering or assembly.
Soldering:
- Solder quickly to avoid overheating the junction.
- Follow manufacturer guidelines for soldering temperatures and times.
(For reference only)
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