ZXTP5401GTA: Top Choice in United States (USA) Utsource Holding Company Limited

Description

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Drain-Source Breakdown Voltage	V(BR)DSS	ID = 250 μA, TD = 25°C	50	-	60	V
Gate-Source Breakdown Voltage	V(BR)GSS	ID = 1 mA, TD = 25°C	±2.5	-	±2.5	V
Forward Transconductance	gfs	VGS = 4.5 V, ID = 300 mA	-	400	-	mS
Input Capacitance	Ciss	VDS = 10 V, f = 1 MHz	-	780	-	pF
Output Capacitance	Coff	VGS = 0 V, f = 1 MHz	-	55	-	pF
Total Gate Charge	Qg	VGS = 4.5 V, ID = 300 mA	-	20	-	nC
Threshold Voltage	VGS(th)	ID = 250 μA, TD = 25°C	0.8	1.2	1.6	V

Handling Precautions:
- The ZXTP5401GTA is sensitive to electrostatic discharge (ESD). Use proper ESD protection measures during handling and assembly.
Mounting:
- Ensure the mounting surface is clean and free from contaminants.
- Apply thermal paste or a thermal pad between the device and heatsink if necessary for optimal heat dissipation.
Operating Conditions:
- Operate within specified voltage and current limits to prevent damage.
- Ensure ambient temperature does not exceed maximum ratings.
Storage:
- Store in original packaging in a dry environment away from direct sunlight.
- Follow first-in-first-out (FIFO) inventory management to ensure freshness.
Testing:
- Verify all connections are secure before applying power.
- Perform initial testing under controlled conditions to validate operation.
Application Notes:
- Refer to the manufacturer’s application notes for detailed design considerations and circuit recommendations.
- For high-frequency applications, minimize lead lengths to reduce parasitic inductances.

(For reference only)