SI9717CY-T1-E3
SI9717CY-T1-E3

 

SI9717CY-T1-E3

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Category: Available (Qty:9999999)
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Description

BUY SI9717CY-T1-E3 https://www.utsource.net/itm/p/12610723.html

Parameter Value/Description
Part Number SI9717CY-T1-E3
Type MOSFET
Configuration N-Channel
Package Type TO-252 (DPAK)
Vds (Max Drain-Source Voltage) 60V
Id (Continuous Drain Current) 4.8A at 25°C, 2.4A at 70°C
Rds(on) (Typical On-Resistance) 0.045Ω at Vgs=10V, 0.06Ω at Vgs=4.5V
Vgs(th) (Gate Threshold Voltage) 1.5V to 3.5V
Qg (Total Gate Charge) 22nC
Operating Temperature Range -55°C to +150°C
Storage Temperature Range -55°C to +150°C
Mounting Type Surface Mount

Instructions:

  1. Handling Precautions: This device is sensitive to electrostatic discharge (ESD). Use proper ESD protection measures when handling.
  2. Soldering: Ensure the soldering temperature does not exceed 260°C for more than 10 seconds to prevent damage to the component.
  3. Installation: Verify that the PCB layout matches the footprint of the TO-252 package to ensure correct installation.
  4. Power Dissipation: To avoid overheating, ensure adequate heat dissipation if operating near maximum current or voltage ratings.
  5. Testing: When testing the device, do not exceed the maximum ratings specified in the parameter table to prevent damage.
  6. Storage: Store in a dry, cool environment within the specified storage temperature range to maintain reliability and performance.
(For reference only)

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