Description
BUY GT30J126 30J126 https://www.utsource.net/itm/p/12610745.html
Parameter |
Description |
Value |
Part Number |
Device Identifier |
GT30J126 30J126 |
Type |
Device Type |
MOSFET |
Configuration |
Channel Configuration |
N-Channel |
Vds (V) |
Drain to Source Voltage |
30V |
Id (A) |
Continuous Drain Current |
126A |
Rds(on) (mΩ) |
On-State Resistance at 25°C |
1.8mΩ |
Vgs(th) (V) |
Gate Threshold Voltage |
2.5V to 4.5V |
Power Dissipation |
Maximum Power Dissipation |
350W |
Package |
Encapsulation Type |
TO-247 |
Operating Temp |
Junction Temperature Range |
-55°C to 175°C |
Instructions:
- Handling: Use appropriate ESD protection when handling the device to prevent damage.
- Mounting: Ensure proper heat sinking for devices operating near their maximum power dissipation limits.
- Soldering: Follow manufacturer guidelines for soldering temperature and duration to avoid damaging the component.
- Testing: Test the device within specified voltage and current limits to ensure reliable operation.
- Storage: Store in a dry environment away from direct sunlight and sources of heat.
(For reference only)
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