GT30J126 30J126

GT30J126 30J126

Category: Available (Qty:9999999)
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Description

BUY GT30J126 30J126 https://www.utsource.net/itm/p/12610745.html

Parameter Description Value
Part Number Device Identifier GT30J126 30J126
Type Device Type MOSFET
Configuration Channel Configuration N-Channel
Vds (V) Drain to Source Voltage 30V
Id (A) Continuous Drain Current 126A
Rds(on) (mΩ) On-State Resistance at 25°C 1.8mΩ
Vgs(th) (V) Gate Threshold Voltage 2.5V to 4.5V
Power Dissipation Maximum Power Dissipation 350W
Package Encapsulation Type TO-247
Operating Temp Junction Temperature Range -55°C to 175°C

Instructions:

  1. Handling: Use appropriate ESD protection when handling the device to prevent damage.
  2. Mounting: Ensure proper heat sinking for devices operating near their maximum power dissipation limits.
  3. Soldering: Follow manufacturer guidelines for soldering temperature and duration to avoid damaging the component.
  4. Testing: Test the device within specified voltage and current limits to ensure reliable operation.
  5. Storage: Store in a dry environment away from direct sunlight and sources of heat.
(For reference only)

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