2SC5198.

2SC5198.

Category: Available (Qty:9999999)
For more information, visit our official website at utsource.us

Description

BUY 2SC5198. https://www.utsource.net/itm/p/12610777.html

Parameter Symbol Min Typ Max Unit Conditions
Collector-Emitter Voltage VCEO - - 80 V IC = 0.5A, Tc = 25°C
Emitter-Base Voltage VEBO -5 - - V IE = 1.0mA
Collector-Base Voltage VCBO - - 90 V IC = 0.5A, Tc = 25°C
Collector Current IC - 0.5 1.0 A VCE = 30V
Continuous Total Dissipation PD - - 625 mW Ta = 25°C
Junction Temperature TJ -55 - 150 °C
Storage Temperature TSTG -55 - 150 °C
Transition Frequency FT - 300 - MHz IC = 10mA, VCE = 10V

Instructions for Use:

  1. Mounting: Ensure the device is mounted on a suitable heat sink if operating near maximum power dissipation to maintain junction temperature within safe limits.
  2. Biasing: For optimal performance, bias the base-emitter junction correctly. The emitter-base voltage should not exceed the specified limit to prevent damage.
  3. Operating Voltage and Current: Do not exceed the maximum collector-emitter voltage or collector current ratings. Exceeding these can lead to device failure.
  4. Temperature Considerations: Monitor the junction temperature especially in high-power applications. Ensure the ambient temperature does not exceed the storage temperature range.
  5. Handling Precautions: Handle the device with care to avoid static damage. Use appropriate ESD protection measures.
  6. Storage: Store the device in a controlled environment within the specified storage temperature range to ensure longevity and reliability.
(For reference only)

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