Description
BUY 2SC5198. https://www.utsource.net/itm/p/12610777.html
Parameter |
Symbol |
Min |
Typ |
Max |
Unit |
Conditions |
Collector-Emitter Voltage |
VCEO |
- |
- |
80 |
V |
IC = 0.5A, Tc = 25°C |
Emitter-Base Voltage |
VEBO |
-5 |
- |
- |
V |
IE = 1.0mA |
Collector-Base Voltage |
VCBO |
- |
- |
90 |
V |
IC = 0.5A, Tc = 25°C |
Collector Current |
IC |
- |
0.5 |
1.0 |
A |
VCE = 30V |
Continuous Total Dissipation |
PD |
- |
- |
625 |
mW |
Ta = 25°C |
Junction Temperature |
TJ |
-55 |
- |
150 |
°C |
|
Storage Temperature |
TSTG |
-55 |
- |
150 |
°C |
|
Transition Frequency |
FT |
- |
300 |
- |
MHz |
IC = 10mA, VCE = 10V |
Instructions for Use:
- Mounting: Ensure the device is mounted on a suitable heat sink if operating near maximum power dissipation to maintain junction temperature within safe limits.
- Biasing: For optimal performance, bias the base-emitter junction correctly. The emitter-base voltage should not exceed the specified limit to prevent damage.
- Operating Voltage and Current: Do not exceed the maximum collector-emitter voltage or collector current ratings. Exceeding these can lead to device failure.
- Temperature Considerations: Monitor the junction temperature especially in high-power applications. Ensure the ambient temperature does not exceed the storage temperature range.
- Handling Precautions: Handle the device with care to avoid static damage. Use appropriate ESD protection measures.
- Storage: Store the device in a controlled environment within the specified storage temperature range to ensure longevity and reliability.
(For reference only)
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