Description
BUY SI4948B https://www.utsource.net/itm/p/12610817.html
| Parameter |
Symbol |
Min |
Typ |
Max |
Unit |
Description |
| Supply Voltage |
VDD |
2.7 |
|
5.5 |
V |
Operating supply voltage range |
| Gate-Source Voltage |
VGS |
-0.5 |
|
5.5 |
V |
Maximum gate-source voltage |
| Continuous Drain Current |
ID |
|
30 |
40 |
A |
Continuous drain current |
| Peak Pulsed Drain Current |
IPD |
|
60 |
|
A |
Peak pulsed drain current |
| RDS(on) |
RDS(on) |
|
4.5 |
8.5 |
mΩ |
On-state resistance |
| Junction Temperature |
Tj |
-40 |
|
150 |
°C |
Operating junction temperature range |
| Storage Temperature |
Tstg |
-55 |
|
150 |
°C |
Storage temperature range |
Instructions for Use:
- Power Supply: Ensure the supply voltage (VDD) is within the specified range of 2.7V to 5.5V.
- Gate Drive: Apply a gate-source voltage (VGS) not exceeding 5.5V to avoid damaging the device.
- Current Handling: Operate within the continuous drain current (ID) limits, up to 30A typical and 40A maximum. For peak conditions, do not exceed 60A pulsed current.
- Thermal Management: Keep the junction temperature (Tj) between -40°C and 150°C to ensure reliable operation. Monitor and manage heat dissipation to prevent overheating.
- Storage Conditions: Store the device in an environment where temperatures range from -55°C to 150°C.
- Handling Precautions: Handle with care to prevent electrostatic discharge (ESD) damage. Use appropriate ESD protection measures during installation and handling.
(For reference only)
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