BUY IRLR7843 https://www.utsource.net/itm/p/12610906.html
| Parameter | Symbol | Min | Typical | Max | Unit | Conditions |
|---|---|---|---|---|---|---|
| Drain-Source On-Resistance | RDS(on) | - | 3.8 | - | mΩ | VGS = 10V, ID = 27A, Tc = 25°C |
| Gate Charge | QG | - | 46 | - | nC | |
| Input Capacitance | Ciss | - | 1480 | - | pF | VDS = 10V |
| Output Capacitance | Coss | - | 320 | - | pF | VDS = 10V |
| Threshold Voltage | VGS(th) | 1.0 | 1.5 | 2.0 | V | ID = 250μA |
| Continuous Drain Current | ID | - | 27 | - | A | TC = 25°C |
| Pulse Drain Current | IDM | - | 90 | - | A | Pulse Width ≤ 10ms, Duty Cycle < 1% |
Power Dissipation Management: Ensure that the power dissipation does not exceed the maximum allowable value to prevent overheating and potential damage.
Heat Sinking: For applications requiring high current or continuous operation, consider using a heat sink to maintain junction temperature within safe limits.
Gate Drive Voltage: Apply gate drive voltage according to the application requirements. Higher gate voltages can reduce RDS(on) but should not exceed the maximum ratings.
Switching Frequency Consideration: The switching frequency affects the performance of the MOSFET. Higher frequencies increase switching losses, so design circuits considering these factors.
Storage Temperature Range: Store the device in an environment where the temperature ranges from -65°C to +150°C to ensure long-term reliability.
Handling Precautions: Follow proper handling procedures to avoid damage from electrostatic discharge (ESD).
Mounting Orientation: Ensure correct mounting orientation to avoid mechanical stress on the leads which can affect electrical characteristics.
Derating Above Ambient Temperature: Derate the continuous drain current as ambient temperature increases beyond 25°C to maintain reliable operation.
Note: Always refer to the latest datasheet provided by the manufacturer for the most accurate and detailed information.
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