Description
BUY FMMT717 https://www.utsource.net/itm/p/12610970.html
| Parameter |
Symbol |
Min |
Typ |
Max |
Unit |
Conditions |
| Collector-Emitter Voltage |
V(BR)CEO |
- |
- |
40 |
V |
IC = -200渭A |
| Emitter-Base Voltage |
VEB |
-5 |
- |
5 |
V |
IE = 卤1mA |
| Collector Current |
IC |
- |
200 |
- |
渭A |
VCE = 30V |
| Base-Emitter Saturation Voltage |
VBE(sat) |
0.6 |
- |
1.2 |
V |
IC = 10渭A, IB = 100渭A |
| Collector-Emitter Saturation Voltage |
VCE(sat) |
0.1 |
- |
0.3 |
V |
IC = 10渭A, IB = 100渭A |
| Storage Temperature Range |
Tstg |
-65 |
- |
150 |
掳C |
- |
| Operating Junction Temperature |
TJop |
-65 |
- |
150 |
掳C |
- |
Instructions for FMMT717:
- Handling Precautions: The FMMT717 is sensitive to electrostatic discharge (ESD). Use appropriate ESD protection measures during handling and installation.
- Mounting: Ensure the device is mounted in a way that allows for adequate heat dissipation if operating near its maximum temperature limits.
- Biasing: Proper biasing of the base-emitter junction is crucial for optimal performance. Ensure the base current (IB) is sufficient to keep the transistor in saturation when used as a switch.
- Voltage Limits: Do not exceed the maximum collector-emitter voltage (VCE) or emitter-base voltage (VEB) ratings to avoid damage to the device.
- Temperature Considerations: Operate within the specified temperature range to ensure reliable operation and longevity of the device.
- Testing: When testing the device, use conditions that closely match the typical operating parameters to get accurate performance data.
(For reference only)
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