BUY GB10B60KD https://www.utsource.net/itm/p/12611039.html
| Parameter | Description | Value | Unit |
|---|---|---|---|
| Part Number | Full part number | GB10B60KD | |
| Type | Device type | Schottky Barrier Diode | |
| Maximum Reverse Voltage (VR) | Maximum reverse voltage the diode can withstand | 60 | V |
| Maximum Forward Current (IF) | Maximum forward current the diode can handle continuously | 10 | A |
| Peak Pulse Current (IPP) | Maximum peak pulse current, non-repetitive | 200 | A |
| Junction Operating Temperature (TJ) | Operating temperature range for the junction | -55 to +150 | °C |
| Storage Temperature (TS) | Temperature range for storage | -55 to +150 | °C |
| Total Power Dissipation (PD) | Maximum power dissipation at rated conditions | 100 | W |
| Forward Voltage Drop (VF) | Voltage drop across the diode when conducting forward current | 0.6 | V |
| Reverse Recovery Time (trr) | Time taken by the diode to recover from conducting to blocking state | 35 | ns |
Mounting and Handling:
Electrical Connections:
Thermal Management:
Surge Considerations:
Storage and Transportation:
Compliance and Standards: