Description
BUY MRF6VP3450HSR5 https://www.utsource.net/itm/p/12611059.html
| Parameter |
Value |
Unit |
| Device Type |
RF LDMOS Power Transistor |
- |
| Package Type |
Plastic Flangeless Matched |
- |
| Frequency Range |
1.8 to 2.2 |
GHz |
| Output Power (P3dB) |
345 |
W |
| Gain at P3dB |
16.0 |
dB |
| Drain Efficiency |
67 |
% |
| VSWR |
2.5:1 |
- |
| Operating Voltage |
28 |
V |
| Quiescent Current |
0.5 |
A |
| Junction Temperature |
-55 to +200 |
°C |
Instructions for Use:
Installation and Handling:
- Handle the MRF6VP3450HSR5 with care to avoid damage to the pins and body.
- Ensure proper grounding during handling to prevent electrostatic discharge (ESD).
Mounting:
- Mount the device on a suitable heatsink to ensure proper heat dissipation.
- Follow manufacturer guidelines for torque specifications when securing the device.
Biasing:
- Apply the recommended biasing conditions to ensure optimal performance.
- Use decoupling capacitors as specified in the datasheet to stabilize the supply voltage.
Operation:
- Operate within the specified frequency range and power levels to avoid damage or reduced performance.
- Monitor the junction temperature to prevent overheating.
Testing:
- Perform initial testing at lower power levels to verify correct operation before increasing to full power.
- Ensure all connections are secure and correct before applying power.
Storage:
- Store in a dry, cool environment away from direct sunlight and sources of heat.
- Keep in original packaging until ready for use to protect against ESD.
(For reference only)
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