K3113B
K3113B

 

K3113B

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Category: Available (Qty:9999999)
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Description

BUY K3113B https://www.utsource.net/itm/p/12611073.html

Parameter Description
Part Number K3113B
Type Bipolar Junction Transistor (BJT)
Polarity NPN
Collector-Emitter Voltage (Vceo) 45 V
Emitter-Base Voltage (Vebo) 6 V
Collector Current (Ic) 800 mA
Power Dissipation (Ptot) 625 mW at Tc = 25°C
Transition Frequency (ft) 300 MHz
DC Current Gain (hFE) Min 100, Max 700 at IC=10mA, VCE=10V
Storage Temperature Range (Tstg) -55°C to +150°C
Operating Temperature Range (Topr) -55°C to +150°C
Package Type SOT-23

Instructions for Use:

  1. Handling Precautions: The K3113B is sensitive to electrostatic discharge (ESD). Use appropriate ESD protection measures when handling the device.
  2. Mounting: Ensure that the mounting area is clean and free from contaminants. Follow manufacturer guidelines for soldering temperatures and times to avoid damage.
  3. Biasing: Proper biasing of the base-emitter junction is crucial to achieve optimal performance. Refer to application notes for detailed biasing circuits.
  4. Heat Management: Given the power dissipation limits, ensure adequate heat sinking if operating near maximum current or in high ambient temperatures.
  5. Testing: When testing the device, do not exceed the specified voltage and current ratings. Use protective circuitry as necessary during testing phases.
(For reference only)

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