MC10H131FNR2G: Top Choice in United States (USA) Utsource Holding Company Limited

Description

Parameter	Description	Value	Unit
Device	High-Voltage, Single-Channel N-Channel MOSFET	MC10H131FNR2G
Drain-Source Voltage	Maximum voltage between drain and source	700	V
Continuous Drain Current	Maximum continuous current flowing from drain to source	1.6	A
Gate-Source Voltage	Maximum voltage between gate and source	±20	V
Power Dissipation	Maximum power dissipation	450	mW
Junction Temperature	Maximum operating junction temperature	150	°C
Storage Temperature	Temperature range for storage	-65 to +150	°C
Package Type	Package type	SOT-23

Handling Precautions: The MC10H131FNR2G is sensitive to electrostatic discharge (ESD). Handle with care using proper ESD protection.
Mounting Orientation: Ensure correct orientation during mounting to prevent short circuits and damage. Refer to the datasheet for pin configuration.
Heat Management: Given the power dissipation limits, ensure adequate heat sinking if operating near maximum power conditions.
Voltage Limits: Do not exceed the specified maximum voltages to avoid device failure or reduced lifespan.
Storage Conditions: Store in a dry environment within the specified temperature range to maintain reliability.
Soldering: Follow recommended soldering profiles to avoid thermal damage. Avoid excessive reflow cycles.

For detailed specifications and application notes, refer to the official datasheet provided by the manufacturer.

(For reference only)