Description
BUY IRF1010E. https://www.utsource.net/itm/p/12611115.html
| Parameter |
Symbol |
Min |
Typical |
Max |
Unit |
Conditions |
| Drain-Source Voltage |
V(DS) |
- |
|
55 |
V |
|
| Gate-Source Voltage |
V(GS) |
- |
|
±20 |
V |
|
| Continuous Drain Current |
I(D) |
- |
|
36 |
A |
Tc = 25°C |
| Pulse Drain Current |
I(D pul) |
- |
|
110 |
A |
Tp = 10 μs, Duty Cycle ≤ 1% |
| Power Dissipation |
P(TOT) |
- |
|
97 |
W |
Tc = 25°C |
| Junction Temperature |
T(J) |
- |
|
150 |
°C |
|
| Storage Temperature |
T(STG) |
-55 |
|
150 |
°C |
|
| Thermal Resistance |
R(θJC) |
- |
|
0.48 |
°C/W |
Case to junction |
Instructions for Use:
- Handling Precautions: The IRF1010E is sensitive to electrostatic discharge (ESD). Use appropriate ESD precautions when handling.
- Mounting: Ensure proper heat sinking for reliable operation at higher currents and temperatures. The thermal resistance should be considered in the design.
- Gate Drive: Apply gate voltage within the specified limits to avoid damage. For optimal performance, use a fast rise and fall time for gate signals.
- Operating Limits: Do not exceed the maximum ratings provided in the table. Continuous operation at the maximum ratings can reduce component life.
- Pulse Operation: When operating in pulse mode, ensure that the duty cycle and pulse width are within the specified limits to prevent overheating.
- Storage and Operating Temperature: Store and operate the device within the temperature range specified to ensure reliability and longevity.
(For reference only)
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