M12N70F

M12N70F

Category: Available (Qty:9999999)
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Description

BUY M12N70F https://www.utsource.net/itm/p/12611121.html

Parameter Value Unit
Part Number M12N70F -
Type MOSFET -
Configuration N-Channel -
Drain Source Voltage (Vds) 700 V
Continuous Drain Current (Id) 12 A
Gate-Source Voltage (Vgs(th)) ±10/4 V
Power Dissipation (Ptot) 18.75 W
Junction Temperature (Tj) -55 to 150 °C
Package TO-220 -

Instructions for Use:

  1. Handling Precautions:

    • Avoid exposing the device to excessive temperatures beyond the specified junction temperature range.
    • Handle with care to prevent damage to the leads and body.
  2. Installation:

    • Ensure proper heat sinking if operating near maximum power dissipation.
    • Mount in a well-ventilated area to facilitate cooling.
  3. Electrical Connections:

    • Connect the source, drain, and gate terminals correctly according to your circuit design.
    • Ensure that the gate voltage does not exceed the specified gate-source voltage limits to avoid damaging the device.
  4. Storage:

    • Store in a dry, cool place away from direct sunlight.
    • Keep in original packaging until ready for use to prevent electrostatic discharge (ESD) damage.
  5. Testing:

    • Test the device parameters within the specified limits before incorporating into final designs.
    • Use appropriate test equipment to avoid introducing noise or interference into measurements.
(For reference only)

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