BUY IRFR7540TR PBF https://www.utsource.net/itm/p/12611157.html
Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
---|---|---|---|---|---|---|
Drain-Source On Resistance | RDS(on) | VGS = 10V, ID = 35A | - | 7.5 | - | mΩ |
Gate Threshold Voltage | VGS(th) | ID = 250μA | 2.0 | - | 4.0 | V |
Input Capacitance | Ciss | VDS = 20V, f = 1MHz | - | 1800 | - | pF |
Total Gate Charge | Qg | VGS = 10V | - | 69 | - | nC |
Continuous Drain Current | ID | TC = 25°C | - | - | 35 | A |
Pulse Drain Current | IDM | tp = 10ms, Rep Rate = 1Hz | - | - | 100 | A |
Power Dissipation | PD | TC = 25°C | - | - | 110 | W |
Junction Temperature | TJ | - | - | - | 150 | °C |
Mounting and Handling: Handle the IRFR7540TR PBF with care to avoid damage to the leads and body. Ensure that the device is mounted on a heatsink if operating at high power levels to maintain junction temperature within limits.
Storage: Store in a dry, cool place away from direct sunlight and sources of heat.
Electrical Connections: Ensure all connections are secure and properly insulated to prevent short circuits. Pay special attention to the gate connection as it has a low threshold voltage.
Heat Management: Monitor the junction temperature to ensure it does not exceed 150°C. Use appropriate cooling methods such as heatsinks or forced air cooling if necessary.
Gate Drive Requirements: The gate drive voltage should be carefully controlled to ensure reliable operation. Typically, a gate-source voltage (VGS) of 10V is used for optimal performance.
Surge Current Handling: Be cautious with pulse drain current (IDM). Ensure that the duration and repetition rate do not exceed specified limits to avoid damage.
Capacitance Considerations: Account for the input capacitance (Ciss) in your circuit design, especially in high-frequency applications where it can affect switching performance.
Testing: Before installing the component into a final assembly, test it under conditions similar to those expected in actual use to verify its performance and reliability.