GP14NC60KD
GP14NC60KD

 

GP14NC60KD

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Category: Available (Qty:9999999)
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Description

BUY GP14NC60KD https://www.utsource.net/itm/p/12611212.html

Parameter Description Value Unit
Type General Purpose Transistor - -
Part Number GP14NC60KD - -
Collector-Emitter Voltage (Vce) Maximum voltage between collector and emitter 600 V
Emitter-Base Voltage (Veb) Maximum voltage between emitter and base 5 V
Collector Current (Ic) Continuous collector current 14 A
Power Dissipation (Ptot) Total power dissipation 125 W
Junction Temperature (Tj) Operating junction temperature range -55 to +150 °C
Storage Temperature (Tstg) Storage temperature range -55 to +150 °C
Transition Frequency (ft) Transition frequency 2.5 MHz
Package Type Case type TO-220 -

Instructions:

  1. Mounting: Ensure the transistor is mounted with adequate heat sinking if operating near its maximum power dissipation.
  2. Handling: Handle with care to avoid damage to the leads or body. Use appropriate anti-static precautions.
  3. Wiring: Connect the emitter, base, and collector to the circuit as per the design specifications. Ensure correct polarity.
  4. Operation: Do not exceed the specified maximum ratings for voltage, current, and power dissipation.
  5. Storage: Store in a dry environment within the specified storage temperature range to prevent damage.
  6. Inspection: Regularly inspect connections and mounting for signs of overheating or physical damage.
(For reference only)

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