GP50B60PD

GP50B60PD

Category: Available (Qty:9999999)
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Description

BUY GP50B60PD https://www.utsource.net/itm/p/12611238.html

Parameter Description Value
Part Number Unique identifier for the component GP50B60PD
Type Type of electronic component Power Diode
Maximum Repetitive Peak Reverse Voltage (VRRM) Maximum reverse voltage it can withstand without breakdown 600 V
Maximum Average Rectified Forward Current (IF(AV)) Continuous forward current at a specified temperature 50 A
Peak Non-Repetitive Forward Surge Current (IFSM) Maximum allowable surge current in a single pulse 800 A
Junction Operating Temperature (TJ) Range of temperatures over which the device can operate -40°C to +150°C
Storage Temperature (TSTG) Temperature range for storage -55°C to +175°C
Total Device Dissipation (Ptot) Maximum power dissipation 250 W
Forward Voltage Drop (VF) Voltage drop across the diode when conducting forward 1.1 V at IF = 50A
Reverse Recovery Time (trr) Time taken for the diode to recover from reverse bias 350 ns
Package Type Physical package type TO-247

Instructions:

  1. Mounting and Handling: Ensure proper heat sinking to manage the thermal resistance. Handle with care to avoid damage to the leads and body.
  2. Soldering: Use a soldering temperature not exceeding 260°C for no more than 10 seconds per operation. Allow adequate cooling between operations.
  3. Storage: Store in a dry, cool place within the specified storage temperature range.
  4. Electrical Connections: Ensure all connections are secure and capable of handling the rated currents and voltages.
  5. Operational Environment: Operate within the specified junction temperature range to ensure reliable performance.
  6. Surge Currents: Be cautious with applications involving high surge currents; ensure they do not exceed IFSM to prevent damage.
  7. Reverse Voltage Protection: Do not exceed the maximum repetitive peak reverse voltage to prevent breakdown.
  8. Dissipation Management: Monitor total device dissipation to stay within limits to avoid overheating and potential failure.
(For reference only)

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