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Parameter | Description | Value |
---|---|---|
Part Number | Unique identifier for the component | GP50B60PD |
Type | Type of electronic component | Power Diode |
Maximum Repetitive Peak Reverse Voltage (VRRM) | Maximum reverse voltage it can withstand without breakdown | 600 V |
Maximum Average Rectified Forward Current (IF(AV)) | Continuous forward current at a specified temperature | 50 A |
Peak Non-Repetitive Forward Surge Current (IFSM) | Maximum allowable surge current in a single pulse | 800 A |
Junction Operating Temperature (TJ) | Range of temperatures over which the device can operate | -40°C to +150°C |
Storage Temperature (TSTG) | Temperature range for storage | -55°C to +175°C |
Total Device Dissipation (Ptot) | Maximum power dissipation | 250 W |
Forward Voltage Drop (VF) | Voltage drop across the diode when conducting forward | 1.1 V at IF = 50A |
Reverse Recovery Time (trr) | Time taken for the diode to recover from reverse bias | 350 ns |
Package Type | Physical package type | TO-247 |