BUY 2SD1402 https://www.utsource.net/itm/p/12611283.html
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | IC = 0 | - | - | 40 | V |
| Emitter-Collector Voltage | VECEO | IE = 0 | - | - | 40 | V |
| Base-Emitter Voltage | VBE | IC = 50mA, IE = 0 | - | - | 1.2 | V |
| Collector Current | IC | VCE = 30V | - | 100 | 300 | mA |
| Base Current | IB | VCE = 30V, IC = 100mA | - | 1 | 3 | mA |
| DC Current Gain | hFE | IC = 100mA | 100 | 300 | 600 | - |
| Transition Frequency | fT | IC = 10mA, VCE = 3V | - | 250 | - | MHz |
| Storage Temperature | Tstg | - | -55 | - | 150 | °C |
Handling Precautions: The 2SD1402 is sensitive to electrostatic discharge (ESD). Handle with care and use appropriate ESD protection measures.
Mounting: Ensure that the transistor is mounted correctly on the PCB. Verify pin orientation before soldering.
Operating Conditions: Do not exceed the maximum ratings listed in the table. Exceeding these limits can cause permanent damage to the device.
Heat Dissipation: If operating near the maximum collector current, ensure adequate heat dissipation to prevent overheating.
Storage: Store in a dry, cool place within the specified storage temperature range to avoid damage.
Testing: When testing or measuring parameters, ensure conditions match those specified in the parameter table for accurate results.
Application Circuits: Refer to application notes and example circuits provided by the manufacturer for optimal performance in specific applications.
