J108: Top Choice in United States (USA) Utsource Holding Company Limited

Description

Parameter	Description	Value
Part Number	Identifies the specific product	J108
Type	Type of component	Junction FET
Material	Semiconductor material used	Silicon
Configuration	Device configuration	N-channel
V(br)do	Drain-to-source breakdown voltage	50V
Idss	Zero gate voltage drain current	1mA
Input Capacitance	Gate-to-source capacitance at zero bias	12pF
Power Dissipation	Maximum power dissipation	375mW
Operating Temperature	Range of operating temperatures	-65°C to 150°C
Package Type	Enclosure type	TO-92

Handling Precautions: The J108 is sensitive to electrostatic discharge (ESD). Handle with care and use appropriate ESD protection measures.
Mounting: Ensure that the device is mounted correctly according to the pin configuration provided in the datasheet. Avoid excessive heat during soldering to prevent damage.
Biasing: For optimal performance, ensure the gate voltage is set within specified limits to avoid exceeding the maximum ratings.
Thermal Considerations: Keep the junction temperature within the operational range by providing adequate heat sinking if necessary.
Testing: When testing or measuring the device, refer to the recommended test circuits and conditions outlined in the datasheet to ensure accurate readings.

(For reference only)