Description
BUY IXFN80N50P https://www.utsource.net/itm/p/12611400.html
| Parameter |
Symbol |
Value |
Unit |
Conditions |
| Maximum Drain Current |
ID |
80 |
A |
Tc = 25°C, Pulse Width ≤ 300 μs |
| Maximum Drain Voltage |
VDSS |
500 |
V |
|
| Gate-Source Voltage |
VGS(th) |
4.0 - 6.0 |
V |
ID = 250 μA, Tc = 25°C |
| Continuous Drain Current |
ID |
27 |
A |
Tc = 25°C |
| Power Dissipation |
PD |
110 |
W |
TC = 25°C |
| Junction Temperature |
Tj |
-55 to 150 |
°C |
|
| Storage Temperature |
Tstg |
-55 to 150 |
°C |
|
Instructions for Use:
- Handling Precautions: The IXFN80N50P is sensitive to electrostatic discharge (ESD). Use proper ESD protection when handling the device.
- Mounting: Ensure that the thermal resistance between the junction and case is minimized by using appropriate heatsinking techniques.
- Operating Conditions: Do not exceed the maximum ratings listed in the table. Pay special attention to the drain current and voltage limits.
- Gate Drive: Apply gate voltages within the specified range to ensure reliable operation. Avoid applying excessive gate-source voltage which can damage the device.
- Thermal Management: Monitor the junction temperature to avoid exceeding the maximum allowable temperature. Adequate cooling may be necessary depending on the application.
- Storage: Store in a dry, cool environment to prevent damage from moisture or extreme temperatures.
For detailed specifications and more advanced applications, refer to the datasheet provided by the manufacturer.
(For reference only)
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