STP30NS15LFP: Top Choice in United States (USA) Utsource Holding Company Limited

Description

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source On-State Resistance	RDS(on)	-	5.0	-	mΩ	VGS = 10V, ID = 30A
Continuous Drain Current	ID	-	-	30	A	TC = 25°C
Pulse Drain Current	Ipp	-	-	180	A	tpp = 10μs, TPW = 10ms, TC = 25°C
Gate Threshold Voltage	VGS(th)	1.0	1.7	2.4	V	ID = 1mA
Input Capacitance	Ciss	-	980	-	pF	VDS = 15V, f = 1MHz
Output Capacitance	Coss	-	65	-	pF	VDS = 15V, f = 1MHz
Total Gate Charge	Qg	-	25	-	nC	VGS = 10V, VDS = 15V

Mounting and Handling:
- Ensure proper heat sinking to maintain the junction temperature within safe operating limits.
- Handle with care to avoid damage to the leads and package.
Biasing:
- Apply gate voltage (VGS) carefully to ensure it is within the specified range to prevent damage or excessive on-state resistance.
Current Limitations:
- Do not exceed the continuous drain current (ID) rating at any temperature.
- For pulse applications, ensure that pulse duration and repetition rate comply with the specified pulse current (Ipp) conditions.
Thermal Considerations:
- Monitor the device temperature to stay within the maximum allowable junction temperature.
- Use adequate cooling methods if necessary.
Capacitance and Switching:
- Be aware of input (Ciss), output (Coss), and reverse transfer capacitances as they affect switching performance.
- Design the circuit considering total gate charge (Qg) for optimal switching characteristics.
Storage and Operation:
- Store in a dry environment to prevent moisture ingress.
- Operate within the specified environmental conditions to ensure reliability.

For detailed specifications and further instructions, refer to the official datasheet provided by STMicroelectronics.

(For reference only)