MJE15032G MJE15033G: Top Choice in United States (USA) Utsource Holding Company Limited

Description

Parameter	MJE15032G (NPN)	MJE15033G (PNP)
Collector-Emitter Voltage (Vceo)	80 V	80 V
Emitter-Base Voltage (Vebo)	6 V	6 V
Collector-Base Voltage (Vcbo)	90 V	90 V
Continuous Collector Current (Ic)	15 A	15 A
Peak Collector Current (Icm)	30 A	30 A
Power Dissipation (Ptot)	115 W	115 W
Storage Temperature Range (Tstg)	-65°C to +150°C	-65°C to +150°C
Operating Junction Temperature (Tj)	-65°C to +150°C	-65°C to +150°C
Transition Frequency (ft)	4 MHz	4 MHz
*Current Gain Bandwidth Product (fthfe)**	1.2 GHz	1.2 GHz
DC Current Gain (hFE)	20 to 200	20 to 200

Mounting and Handling: Ensure proper heat sinking for efficient heat dissipation, especially under high-power conditions. Handle with care to avoid damage from electrostatic discharge (ESD).
Biasing: Properly bias the base-emitter junction to ensure stable operation. Avoid over-driving the base current to prevent thermal runaway.
Thermal Management: Monitor the operating temperature to stay within the specified limits. Consider using forced air cooling or other cooling methods if necessary.
Circuit Design: Incorporate protection diodes and capacitors as needed to safeguard against voltage spikes and transient conditions.
Storage and Environment: Store in a dry, cool place away from direct sunlight and sources of heat. Ensure the environment is free from corrosive substances that could degrade performance.

These guidelines help ensure optimal performance and longevity of the MJE15032G and MJE15033G transistors in your applications.

(For reference only)