Description
BUY STN3NF06 https://www.utsource.net/itm/p/12611587.html
| Parameter |
Symbol |
Test Conditions |
Min |
Typ |
Max |
Unit |
| Drain-Source On-Resistance |
RDS(on) |
VGS = 10V, ID = 2.7A |
- |
0.065 |
- |
Ω |
| Gate-Threshold Voltage |
VGS(th) |
ID = 250μA |
1.0 |
- |
2.0 |
V |
| Drain Current (Continuous) |
ID |
TC = 25°C |
- |
30 |
- |
A |
| Pulse Drain Current |
IDM |
tp = 10ms, TC = 25°C |
- |
90 |
- |
A |
| Power Dissipation |
PD |
TC = 25°C |
- |
40 |
- |
W |
| Junction Temperature |
TJ |
- |
-20 |
- |
150 |
°C |
| Storage Temperature Range |
Tstg |
- |
-55 |
- |
150 |
°C |
Instructions for Use:
- Handling Precautions: The STN3NF06 is sensitive to electrostatic discharge (ESD). Handle with care and use appropriate ESD protection measures.
- Mounting: Ensure proper heat sinking if operating near maximum power dissipation limits. Follow recommended PCB layout guidelines for optimal thermal performance.
- Gate Drive: For reliable operation, ensure the gate voltage (VGS) is within specified limits. Exceeding these limits can damage the device.
- Current Limitation: Do not exceed the maximum drain current (IDM) during pulse operations or continuous current (ID) ratings to avoid overheating and potential failure.
- Temperature Monitoring: Monitor junction temperature (TJ) to prevent exceeding the maximum allowable temperature. Consider derating power dissipation at higher temperatures.
- Storage: Store in a dry environment within the specified storage temperature range (Tstg) to maintain device integrity.
For detailed application notes and further specifications, refer to the official datasheet provided by the manufacturer.
(For reference only)
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