IPB107N20N3

IPB107N20N3

Category: Available (Qty:9999999)
For more information, visit our official website at utsource.us

Description

BUY IPB107N20N3 https://www.utsource.net/itm/p/12611700.html

Parameter Symbol Min Typ Max Unit Description
Collector-Emitter Voltage V CES 200 V Maximum collector-emitter voltage
Emitter-Base Voltage V EBS 7 V Maximum emitter-base voltage
Collector Current I C 10 A Continuous collector current
Power Dissipation P T 150 W Total power dissipation
Junction Temperature T J -55 150 掳C Operating junction temperature range
Storage Temperature T STG -55 150 掳C Storage temperature range
Transition Frequency f T 1.3 MHz Transition frequency

Instructions for Use:

  1. Handling Precautions: Ensure that the device is handled with care to avoid damage from electrostatic discharge (ESD). Use proper anti-static measures.
  2. Mounting: Mount the device in a way that ensures good thermal contact if operating at high currents or power levels. Consider using heatsinks as necessary.
  3. Operating Conditions: Operate within specified voltage and current limits to prevent damage. Pay special attention to the junction temperature, which should not exceed 150掳C.
  4. Storage: Store in a dry, cool place within the temperature range specified to ensure longevity.
  5. Testing: Before installation, test the device under controlled conditions to ensure it meets the required specifications.

Note: Always refer to the latest datasheet provided by the manufacturer for the most accurate and detailed information.

(For reference only)

More detail about Utsource Holding Company Limited
Utsource Holding Company Limited
Utsource Holding Company Limited Electronic Component Wholesaler, IC Chip Distributor, IGBT Module Supplier in California, USA | Utsource Holding Company Limited