Description
BUY STW26NM50N https://www.utsource.net/itm/p/12611746.html
| Parameter |
Symbol |
Min |
Typ |
Max |
Unit |
Description |
| Drain-Source Voltage |
VDSS |
|
|
500 |
V |
Maximum drain-source voltage |
| Gate-Source Voltage |
VGS |
-10 |
|
20 |
V |
Maximum gate-source voltage |
| Continuous Drain Current |
ID |
|
26 |
|
A |
Continuous drain current at Tc=25°C |
| Pulse Drain Current |
IDM |
|
140 |
|
A |
Pulse drain current (t=10μs) |
| Power Dissipation |
PD |
|
|
230 |
W |
Maximum power dissipation |
| Junction Temperature |
TJ |
-55 |
|
175 |
°C |
Operating junction temperature range |
| Storage Temperature |
TSTG |
-55 |
|
175 |
°C |
Storage temperature range |
Instructions for Use:
Handling Precautions:
- Ensure that the device is handled with care to avoid damage from electrostatic discharge (ESD).
- Use appropriate ESD protection measures such as wrist straps and conductive packaging.
Mounting:
- Mount the device on a suitable heatsink if operating at high currents or power levels to ensure proper heat dissipation.
- Follow recommended PCB layout guidelines to minimize inductance and improve thermal performance.
Biasing:
- Apply gate-source voltage (VGS) within the specified limits to prevent gate oxide damage.
- Ensure that the drain-source voltage (VDS) does not exceed the maximum rated voltage.
Operation:
- Operate within the continuous and pulse current ratings to avoid overheating and potential failure.
- Monitor the junction temperature (TJ) to ensure it stays within the operational range.
Storage:
- Store in a dry, cool environment within the specified storage temperature range to maintain reliability.
For detailed application notes and further information, refer to the datasheet provided by STMicroelectronics.
(For reference only)
More detail about Utsource Holding Company Limited
