Elec-component
DGD21904MS14-13
DGD21904MS14-13

 

DGD21904MS14-13

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Category: Elec-component Available (Qty:9999999)
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Description

BUY DGD21904MS14-13 https://www.utsource.net/itm/p/12611751.html

Parameter Description
Part Number DGD21904MS14-13
Type MOSFET - Metal-Oxide-Semiconductor Field-Effect Transistor
Configuration Dual N-Channel
Package SOIC-8 (Small Outline Integrated Circuit)
Operating Temperature -55掳C to +150掳C
Drain-Source Voltage (Vds) 60V
Gate-Source Voltage (Vgs) 卤20V
Continuous Drain Current (Id) 4.5A at 25掳C, 2.7A at 70掳C
Rds(on) 12m惟 at Vgs=10V
Gate Charge (Qg) 18nC
Power Dissipation (Ptot) 1.1W (derated linearly above 25掳C)
Storage Temperature -65掳C to +150掳C

Instructions:

  1. Handling Precautions: Handle with care to avoid damage to the component. Use appropriate anti-static measures.
  2. Mounting: Ensure proper mounting on a PCB with adequate thermal management if operating near maximum temperature or power ratings.
  3. Electrical Connections: Connect gate, source, and drain according to circuit design specifications. Verify polarity and connections before applying power.
  4. Testing: Test the device within specified limits to ensure reliable operation. Avoid exceeding maximum voltage and current ratings.
  5. Storage: Store in a dry, cool place away from direct sunlight and sources of heat.
  6. Soldering: Follow manufacturer guidelines for soldering temperature and duration to prevent damage to the component.
(For reference only)

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