Description
BUY YMP230N55 https://www.utsource.net/itm/p/12611793.html
| Parameter |
Description |
Value |
| Part Number |
Device Part Number |
YMP230N55 |
| Type |
Device Type |
MOSFET |
| Configuration |
Channel Type |
N-Channel |
| Voltage (Vds) |
Drain-to-Source Voltage |
55 V |
| Current (Id) |
Continuous Drain Current |
230 A |
| Power Dissipation |
Maximum Power Dissipation |
180 W |
| Rds(on) |
On-State Resistance at 25°C |
1.7 mΩ |
| Gate Charge |
Total Gate Charge |
94 nC |
| Switching Frequency |
Recommended Operating Frequency |
Up to 500 kHz |
| Package |
Housing Style |
TO-247 |
| Operating Temp |
Junction Temperature Range |
-55°C to 175°C |
Instructions for Use:
- Installation: Ensure the device is mounted on a suitable heatsink to dissipate heat effectively, especially when operating near maximum power dissipation.
- Handling Precautions: Handle with care to avoid damage to the gate terminal, which is sensitive to electrostatic discharge (ESD).
- Storage: Store in a dry environment and follow anti-static storage guidelines to prevent damage.
- Mounting Orientation: Follow manufacturer recommendations for mounting orientation to ensure optimal thermal performance.
- Circuit Design: Design circuits ensuring that the maximum voltage and current ratings are not exceeded. Consider derating for higher reliability.
- Testing: Perform initial testing under controlled conditions to verify correct operation before full-scale deployment.
(For reference only)
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