Description
BUY FQB50N06L https://www.utsource.net/itm/p/12612135.html
| Parameter |
Symbol |
Min |
Typ |
Max |
Unit |
Description |
| Drain-Source Voltage |
VDS |
|
|
60 |
V |
Maximum drain-source voltage |
| Gate-Source Voltage |
VGS |
-15 |
|
15 |
V |
Maximum gate-source voltage |
| Continuous Drain Current |
ID |
|
|
5.0 |
A |
Continuous drain current at TC = 25°C |
| Pulse Drain Current |
IGM |
|
|
34 |
A |
Peak pulse drain current |
| Power Dissipation |
PD |
|
|
0.9 |
W |
Total power dissipation (TC = 25°C) |
| Junction Temperature |
TJ |
-55 |
|
150 |
°C |
Operating junction temperature range |
| Storage Temperature |
TSTG |
-55 |
|
150 |
°C |
Storage temperature range |
Instructions for FQB50N06L:
Handling Precautions:
- The FQB50N06L is sensitive to electrostatic discharge (ESD). Use appropriate ESD protection measures during handling and installation.
Mounting:
- Ensure proper heat sinking if the device will be operated near its maximum power dissipation limits.
- Follow recommended PCB layout guidelines to minimize inductance and ensure good thermal performance.
Biasing:
- Apply a gate-source voltage (VGS) within the specified limits (-15V to +15V) to avoid damaging the MOSFET.
- For optimal switching performance, use a gate drive voltage that fully turns on the MOSFET, typically around 10V or higher depending on the application.
Operating Conditions:
- Keep the junction temperature (TJ) within the operational range (-55°C to +150°C) to prevent thermal damage.
- Monitor the drain current (ID) and ensure it does not exceed the continuous or pulse ratings specified in the table.
Storage:
- Store the device in a dry environment within the storage temperature range (-55°C to +150°C).
Testing:
- Verify all connections and parameters before applying power to the circuit.
- Perform functional tests under typical operating conditions to ensure reliable operation.
(For reference only)
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