SGH80N60UFDTU: Top Choice in United States (USA) Utsource Holding Company Limited

Description

Parameter	Symbol	Min	Typ	Max	Unit	Description
Drain-Source Voltage	VDSS	-	600	-	V	Maximum drain-to-source voltage
Gate-Source Voltage	VGS	-20	-	20	V	Maximum gate-to-source voltage
Continuous Drain Current	ID	-	8.0	-	A	Continuous drain current at TC = 25°C
Pulse Drain Current	IDM	-	40	-	A	Pulse drain current (t < 10 μs)
Power Dissipation	PD	-	150	-	W	Total power dissipation at TC = 25°C
Junction Temperature	Tj	-55	-	175	°C	Operating junction temperature range
Storage Temperature	Tstg	-55	-	175	°C	Operating storage temperature range

Installation:
- Ensure that the SGH80N60UFDTU is handled with care to avoid damage to the leads and body.
- Follow proper mounting techniques to ensure good thermal contact and mechanical stability.
Thermal Considerations:
- For applications requiring high power dissipation, use an appropriate heat sink to maintain the junction temperature within specified limits.
Electrical Connections:
- Connect the drain terminal to the high-voltage side of the circuit.
- Connect the source terminal to the low-voltage side or ground.
- Apply control signals to the gate terminal ensuring they do not exceed the maximum ratings.
Gate Drive Requirements:
- The gate drive voltage should be within the specified range to prevent damage and ensure reliable operation.
- Ensure the gate resistor is chosen to limit inrush currents and provide stable switching.
Overcurrent Protection:
- Implement overcurrent protection circuits to safeguard against excessive drain currents which can lead to device failure.
Handling Precautions:
- Be aware of electrostatic discharge (ESD) sensitivity and use ESD protective measures when handling the component.
- Avoid exposing the device to environments exceeding the storage temperature range.
Testing:
- Before final installation, test the device under controlled conditions to ensure it meets the required specifications and performance criteria.

(For reference only)