IRC530

IRC530

Category: Available (Qty:9999999)
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Description

BUY IRC530 https://www.utsource.net/itm/p/12612243.html

Parameter Description
Part Number IRC530
Type MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)
Configuration N-channel Enhancement Mode
VDS (V) Drain-to-Source Voltage: ±60V
RDS(on) (Ω) On-State Resistance: 0.045 Ω at VGS = 10V
ID (A) Continuous Drain Current: 27A at TC = 25°C
PD (W) Total Power Dissipation: 140W at TC = 25°C
fT (MHz) Transition Frequency: 3.4 MHz
Qg (nC) Total Gate Charge: 79 nC
Package Type TO-220

Instructions for Use:

  1. Mounting: Ensure the device is mounted on a heatsink if operating near maximum power dissipation to maintain junction temperature within safe limits.
  2. Gate Drive: Apply sufficient gate voltage (typically ≥10V) to fully enhance the channel and minimize RDS(on).
  3. Handling Precautions: Handle with care to avoid damage from electrostatic discharge (ESD). Use proper ESD protection equipment.
  4. Storage: Store in original packaging in a dry, cool place away from direct sunlight.
  5. Installation: Follow manufacturer guidelines for soldering and installation to ensure optimal performance and reliability.
  6. Derating: For continuous operation above ambient temperatures, derate the power dissipation according to the derating factor specified in the datasheet.
(For reference only)

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