BUY IRC530 https://www.utsource.net/itm/p/12612243.html
Parameter | Description |
---|---|
Part Number | IRC530 |
Type | MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) |
Configuration | N-channel Enhancement Mode |
VDS (V) | Drain-to-Source Voltage: ±60V |
RDS(on) (Ω) | On-State Resistance: 0.045 Ω at VGS = 10V |
ID (A) | Continuous Drain Current: 27A at TC = 25°C |
PD (W) | Total Power Dissipation: 140W at TC = 25°C |
fT (MHz) | Transition Frequency: 3.4 MHz |
Qg (nC) | Total Gate Charge: 79 nC |
Package Type | TO-220 |