Description
BUY SM8S36AHE3_A/I https://www.utsource.net/itm/p/12612321.html
| Parameter |
Description |
| Part Number |
SM8S36AHE3_A/I |
| Type |
MOSFET |
| Polarity |
N-Channel |
| VDS (Max Drain-Source Voltage) |
80V |
| VGS (Max Gate-Source Voltage) |
卤20V |
| RDS(on) @ VGS=10V |
3.6 m惟 (Typical at ID=50A, VGS=10V) |
| ID (Continuous Drain Current) |
50A (at Tc=25掳C) |
| PD (Power Dissipation) |
100W (at Tc=25掳C) |
| fT (Transit Frequency) |
4 MHz |
| Qg (Total Gate Charge) |
79 nC |
| Package |
TO-247 |
| Operating Temperature Range |
-55掳C to +175掳C |
Instructions for Use:
- Mounting: Ensure the MOSFET is mounted on a suitable heatsink to dissipate heat effectively and maintain operating temperatures within safe limits.
- Gate Drive: Apply gate voltage carefully not to exceed 卤20V to prevent damage to the gate oxide.
- Storage Conditions: Store in a dry environment away from direct sunlight and sources of heat.
- Handling: Handle with care to avoid static damage; use appropriate ESD protection measures.
- Installation: Follow manufacturer guidelines for soldering and installation to ensure proper electrical connections and thermal performance.
- Testing: Before installing into final circuits, test the MOSFET under controlled conditions to verify functionality.
For detailed application notes and further technical support, refer to the datasheet provided by the manufacturer or contact their technical support team.
(For reference only)
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