K9F1G08UOB

K9F1G08UOB

Category: Available (Qty:9999999)
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Description

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Parameter Description
Device Type NAND Flash Memory
Density 1 Gbit (128 MByte)
Organization 8,192 Pages x 2,048 Bytes/Page + 64 Bytes/Spare Area
Interface 8-bit I/O interface
Voltage (Vcc) 3.3V ± 0.3V (I/O), 3.3V ± 0.3V (Core)
Operating Temp. -40°C to +85°C
Package TSOP-48
Data Retention 10 years at 25°C
Erase/Program Page Program: 200 μs max, Block Erase: 2 ms max
Endurance 100,000 program/erase cycles per block
Access Time tR = 25 ns typical

Instructions for Use

  1. Initialization

    • Apply Vcc and ground.
    • Ensure all inputs are held at valid logic levels before applying power.
  2. Command Sequence

    • All operations (read, write, erase) start with a command sequence.
    • Commands must be sent in the correct order as specified in the datasheet.
  3. Read Operation

    • Send read command followed by column address, then row address.
    • Data is output on the rising edge of the clock after the last address byte.
  4. Page Program

    • Load data into the page buffer using the Program Load command.
    • Execute the Page Program command to write data from the buffer to the flash memory.
  5. Block Erase

    • Select the block to be erased using the Block Erase command.
    • Wait for the operation to complete by polling the status register or using the Ready/Busy pin.
  6. Error Handling

    • Check the status register after each operation for errors.
    • Implement error correction code (ECC) algorithms as necessary based on the application requirements.
  7. Power Management

    • For low-power applications, use the Deep Power Down mode by sending the appropriate command.
    • Restore normal operation by sending an exit command.
  8. Handling

    • Handle with care to avoid damage from electrostatic discharge (ESD).
    • Follow proper handling procedures during installation and operation.
(For reference only)

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