IRFP640: Top Choice in United States (USA) Utsource Holding Company Limited

Description

Parameter	Symbol	Value	Unit
Drain-Source Voltage	V(DS)	200	V
Gate-Source Voltage	V(GS)	±20	V
Continuous Drain Current	I(D)	14	A
Pulse Drain Current	I(D pul)	56	A
Power Dissipation	P(TOT)	89	W
Junction Temperature	T(j)	-55 to +175	°C
Storage Temperature	T(stg)	-55 to +150	°C
Total Gate Charge	Q(g)	100	nC
Input Capacitance	Ciss	1700	pF
Output Capacitance	Coss	350	pF
Reverse Transfer Capacit.	Crss	380	pF

Handling Precautions:
- Avoid exceeding the maximum ratings provided in the table.
- Ensure proper heat sinking when operating at high currents or power levels.
Installation:
- Mount the device on a suitable heatsink to maintain junction temperature within specified limits.
- Use insulated mounting hardware if the case is electrically connected to the drain.
Biasing and Drive Requirements:
- Apply gate-source voltage (V(GS)) within the recommended range to avoid damage.
- Ensure that the gate drive circuitry can supply sufficient current to charge and discharge the gate capacitance quickly, enhancing switching performance.
Testing:
- When testing the device, ensure all parameters are within the specified limits.
- Use appropriate safety measures and equipment to prevent electrical hazards.
Storage:
- Store in a dry environment within the storage temperature range to prevent damage.
- Handle with care to avoid mechanical damage to the package.

(For reference only)