MX66C1024MC70

MX66C1024MC70

Category: Available (Qty:9999999)
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Description

BUY MX66C1024MC70 https://www.utsource.net/itm/p/12613856.html

Parameter Description Value
Device Type Non-Volatile Static Random Access Memory (NVS RAM) MX66C1024MC70
Memory Size Total memory size 1 Mbit (128 K x 8)
Supply Voltage (Vcc) Operating supply voltage range 1.71 V to 3.63 V
Operating Temperature Industrial temperature range -40掳C to +85掳C
Standby Current Quiescent current in standby mode 1 渭A (Typical)
Active Current Current during read/write operations 3 mA (Typical)
Access Time Maximum access time for read/write operations 70 ns
Package Type Type of package SOIC-8, TSSOP-8
Write Cycle Time required for a write cycle 1 ms (Maximum)
Endurance Number of write cycles per bit 1 million cycles
Data Retention Minimum data retention period 10 years

Instructions for Use:

  1. Power Supply: Ensure the device is powered within the specified supply voltage range of 1.71 V to 3.63 V.
  2. Temperature Considerations: Operate the device within the industrial temperature range of -40掳C to +85掳C for reliable performance.
  3. Handling Precautions: Handle with care to avoid static damage. Use appropriate ESD protection measures.
  4. Programming: Follow the timing specifications for access times and write cycles to prevent data corruption.
  5. Storage: Store in a dry environment when not in use to maintain data integrity over the specified retention period.
  6. Installation: Ensure proper installation into compatible sockets or PCBs, paying attention to pin orientation and soldering if applicable.
(For reference only)

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