| Specifications | |
| Attribute | Value |
| Channel Type | N |
| Maximum Continuous Drain Current | 4.1 A |
| Maximum Drain Source Voltage | 800 V |
| Package Type | TO-220AB |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 3 Ω |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 125 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 78 nC @ 10 V |
| Length | 10.41mm |
| Transistor Material | Si |
| Height | 9.01mm |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Width | 4.7mm |
