4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET
DESCRIPTION
The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.
FEATURES
* RDS(ON)<1.5Ω @ VGS=10V
* Single Pulse Avalanche Energy Rated
* Rugged- SOA is Power Dissipation Limited
* Fast Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
SYMBOL
Singapore
