Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Details
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
HVMDIP-4
Transistor Polarity:
P-Channel
Number of Channels:
1 Channel
Vds - Drain-Source Breakdown Voltage:
60 V
Id - Continuous Drain Current:
1.6 A
Rds On - Drain-Source Resistance:
280 mOhms
Vgs - Gate-Source Voltage:
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:
2 V
Qg - Gate Charge:
19 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
1.3 W
Channel Mode:
Enhancement
Packaging:
Tube
Configuration:
Single
Series:
IRFD
Transistor Type:
1 P-Channel
Brand:
Vishay Semiconductors
Forward Transconductance - Min:
1.3 S
Fall Time:
29 ns
Product Type:
MOSFET
Rise Time:
68 ns
Factory Pack Quantity:
2500
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
15 ns
Typical Turn-On Delay Time:
13 ns
Unit Weight:
0.086876 oz
Malaysia
