|
Specifications |
|
|
|
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|
Attribute |
Value |
|
Channel Type |
N |
|
Maximum Continuous Drain Current |
4.1 A |
|
Maximum Drain Source Voltage |
800 V |
|
Package Type |
TO-220AB |
|
Mounting Type |
Through Hole |
|
Pin Count |
3 |
|
Maximum Drain Source Resistance |
3 Ω |
|
Channel Mode |
Enhancement |
|
Minimum Gate Threshold Voltage |
2V |
|
Maximum Power Dissipation |
125 W |
|
Transistor Configuration |
Single |
|
Maximum Gate Source Voltage |
-20 V, +20 V |
|
Number of Elements per Chip |
1 |
|
Typical Gate Charge @ Vgs |
78 nC @ 10 V |
|
Length |
10.41mm |
|
Transistor Material |
Si |
|
Height |
9.01mm |
|
Maximum Operating Temperature |
+150 °C |
|
Minimum Operating Temperature |
-55 °C |
|
Width |
4.7mm |
Malaysia
