Product Category:
Bipolar Transistors - BJT
RoHS:
N
Mounting Style:
Through Hole
Package/Case:
TO-92-3
Transistor Polarity:
PNP
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
150 V
Collector- Base Voltage VCBO:
160 V
Emitter- Base Voltage VEBO:
5 V
Maximum DC Collector Current:
0.6 A
Pd - Power Dissipation:
625 mW
Gain Bandwidth Product fT:
400 MHz
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Series:
2N5401
Packaging:
Ammo Pack
Height:
4.58 mm
Length:
4.58 mm
Technology:
Si
Width:
3.86 mm
Brand:
ON Semiconductor / Fairchild
Continuous Collector Current:
- 600 mA
DC Collector/Base Gain hFE Min:
30 at 1 mA, 5 V, 60 at 10 mA, 5 V, 50 at 50 mA, 5 V
Product Type:
BJTs - Bipolar Transistors
Factory Pack Quantity:
2000
Subcategory:
Transistors
Unit Weight:
240 mg
